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LITE-ON SEMICONDUCTOR T1M5F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA) Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise I
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  T1M5F-A SERIES MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) ℃ FEATURES One-Piece, Injection-Molded PackageBlocking Voltage to 600 VoltsSensitive Gate Triggering in Four Trigger Modes(Quadrants) for all possible Combinations of TriggerSources, and especially for Circuits that Source GateDrivesAll Diffused and Glassivated Junctions for MaximumUniformity of Parameters and ReliabilityImproved Noise Immunity (dv/dt Minimum of 20 V/msecat 110) ℃ Commutating di/dt of 1.6 Amps/msec at 110 ℃ High Surge Current of 12 AmpsPb-Free Package Sensitive Gate TriacsSillicon Bidirectional Thyristors TRIACs1.0 AMPERES RMS400 thru 600 VOLTS Rating Symbol Value Unit Peak Repetitive Off–State Voltage (T J = -40 to 110 ℃ , Sine Wave, 50 to 60 Hz; Gate Open)V DRM ,V RRM 400600VoltsOn-State RMS CurrentFull Cycle Sine Wave 50 to 60 Hz (T C = 50 ℃ )I T(RMS) 1.0AmpPeak Non-Repetitive Surge CurrentFull Cycle Sine Wave 60 Hz (Tj =25 ℃ )I TSM 12.0AmpsCircuit Fusing Consideration (t = 8.3 ms)I t0.60A sPeak Gate Power ( t 2.0us ,Tc = 80 ≦ ℃ )P GM 5.0WattAverage Gate Power (Tc= 80, t 8.3 ms ) ℃ ≦ P G(AV) 0.1WattPeak Gate Current ( t 2.0us ,Tc = 80 ≦ ℃ )I GM 1.0AmpPeak Gate Voltage ( t 2.0us ,Tc = 80 ≦ ℃ )V GM 5.0VoltsOperating Junction Temperature RangeT J -40 to +110 ℃ Storage Temperature Range Tstg -40 to +150 ℃ 22 REV. 2, Jun-2005, KTXD11 Notice: (1) V DRM and V RRM for all types can be applied on a continuous basis. Blockingvoltages shall not be tested with a constant current source such that thevoltage ratings of the devices are exceeded. TO-92 (TO-226AA) SEATING PLANE   TO-92 (TO-226AA) All Dimensions in millimeter TO-92 DIM.MIN.MAX.ACDEFGHB4.454.705.334.323.184.191.391.152.422.6612.7------2.042.663.43-----I-----2.93 1 Main Terminal 12 Gate3 Main Terminal 2PIN ASSIGNMENT SEMICONDUCTORLITE-ON T1M5F400AT1M5F600A  RATING AND CHARACTERISTIC CURVEST1M5F-A SERIES Characteristic Symbol Value Unit Thermal Resistance - Junction to Lead- Junction to Case- Junction to AmbientRthJLRthJCRthJA6075150  /  ℃ WMaximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 SecondsT L  260 ℃ Characteristics Symbol Min Typ Max Unit Peak Reptitive Forward or Reverse Blocking Current T  j =25 ℃ (VD=Rated VDRM and VRRM; Gate OPen) T  j =110 ℃ I DRM I RRM ---------------- 10100uAuAPeak Forward On-State Voltage(I TM= ±1A Peak @Tp 2.0 ms, Duty Cycle 2%) ≦ ≦ V TM --------1.9 VoltsGate Trigger Current (Continuous dc)(V D = 12 Vdc; R L = 100 Ohms)I GT1 I GT2 I GT3 I GT4 --------------------------------5.05.05.07.0mAHolding Current (V D = 12 V, Initiating Current = ±200 mA,Gate Open)I H ----1.510mATurn-On Time (V D = Rated VDRM , I TM = 1.0 A pk, I G = 25 mA)tgt----2----usGate Trigger Voltage (Continuous dc)(V D = 12 Vdc; R L =100 Ohms)V GT1 V GT2 V GT3 V GT4 ----------------0.660.770.840.882.02.02.02.5VoltsLatching Current (V D =12V,I G = 10 mA)I L1 I L2 I L3 I L4 ----------------1.610.51.52.515201515mAGate Non-Trigger Voltage (V D = 12V, R L = 100 Ohms , T J =110 ℃ )V GD 0.1--------VoltsCritical Rate of Rise of Off-State Voltage(V D =Rated V DRM ,Exponential Waveform, Gate Open, T J =110) ℃ dv/dt20 60----V/usRepetitive Critical Rate of Rise of On-State CurrentPulse Width = 20 us, IPKmax = 15 A, diG/dt = 1 A/us, f = 60 Hzdi/dt--------10 A/usRate of Change of Commutating Current (V D = 400 V, I TM = .84 A,Commutating dv/dt = 1.5 V/us, Gate Open, T J = 110°C, f = 250 Hz,with Snubber)di/dt(c)1.6--------A/ms THERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICS (T c =25 unless otherwise noted) ℃ OFF CHARACTERISTICSON CHARACTERISTICSDYNAMIC CHARACTERISTICS  RATING AND CHARACTERISTIC CURVEST1M5F-A SERIES 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.030405060708090100110     T  c ,   C   A   S   E   T   E   M   P   E   R   A   T   U   R   E   (   ) IT(RMS),RMS ON-STATE CURRENT(AMPS) Figure 2. RMS Current DeratingFigure 1. RMS Current Derating 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00.00.20.40.60.81.01.2     T  a ,   A   M   B   I   E   N   T   T   E   M   P   E   R   A   T   U   R   E   (   ) IT(RMS),RMS ON-STATE CURRENT(AMPS)        ℃ 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.502030405060708090100110     T  a ,   A   M   B   I   E   N   T   T   E   M   P   E   R   A   T   U   R   E   (   ) IT(RMS),RMS ON-STATE CURRENT(AMPS)        ℃       ℃ Figure 3. Power Dissipation a= 30°90°120°180°DC60°a= 30°90°120°180°DC60°a= 30°90°120°180°DC60°  RATING AND CHARACTERISTIC CURVEST1M5F-A SERIES Specifications mentioned in this publication are subject to change without notice. ◎ Figure 6. Maximum Allowable Surge Current 1 10 100 NUMBER OF CYCLES 0481216 T J =25 ℃ f= 60MHz    I      T     S     M  ,   P   E   A   K   S   U   R   G   E   C   U   R   R   E   N   T   (   A   M   P   S   )
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